Journal of Advances in Nanomaterials

Download PDF (454.6 KB) PP. 105 - 111 Pub. Date: April 19, 2017

DOI: 10.22606/jan.2017.22003

• Rana Mukherji^*
  The ICFAI University, Jaipur, India
• Vishal Mathur
  
  The ICFAI University, Jaipur, India
• Arvind Samariya
  
  S.S. Jain Subodh P.G. College, Jaipur, India
• Manishita Mukherji
  
  Amity University Rajasthan, Jaipur, India

In this work, the Co²⁺ ions doping effect on the magnetic behaviour of In₂O₃ nanoparticles (NPs) has been discussed. The In_0.94Co_0.06O sample was prepared by solid state reaction method. According to XRD, the single crystalline phase was identified as the cubic bixbyite crystal structure and doping effect of prepared NPs. The magnetic study at room temperature (RT) revealed that the prepared Co doped In₂O₃ sample had achieved overlapped paramagnetic (PM) properties defeating the diamagnetic (DM) properties of In₂O₃. Furthermore, it was found that the ferromagnetic (FM) is clearly induced by post-annealing in hydrogen atmosphere at 50 and 300 K. This study also depicts that the sample is finally returned to the PM state after re-heating.

Diluted magnetic semiconductors, transition metals, In₂O₃.

[1] S.A. Wolf, D.D. Awschalom, R.A. Buhrman, J.M. Daughton, S. von Molnar, M.L.Roukes, A.Y. Chtchelkanova, D.M. Treger, “Spintronics: A Spin-Based Electronics Vision for the Future” Science, vol. 294, no. 5546, pp. ,1488–1495, 2001.

[2] S.B. Ogale “Dilute Doping, Defects, and Ferromagnetism in Metal Oxide Systems”, Advance Materials, doi:10.1002/adma.200903891,2010.

[3] T. Dietl , “More than just room temperature” Nature Materials, doi:10.1038/nmat2918, 2010.

[4] A. A. Dakhel, “Comparative Study of the Hydrogenation of Cu and TM (Mn,Fe,Ni)-Codoped ZnO” Nanocomposite DMS, doi:10.1007/s10948-015-2997-6,2015.

[5] K.M. Shaif, , R. Vinod Kumar, R.J. Bose, , V.N.Uvais, , V.P Mahadevan Pillai, "Effect of Cu on the microstructure and electrical properties of Cu/ZnO thin films.", Journal of Alloys and Compounds, vol. 551 pp 243-248, 2013.

[6] C. Xia, F.Wang, C.Hu, "Theoretical and experimental studies on electronic structure and optical properties of Cu-doped ZnO.", Journal of Alloys and Compounds , vol. 589, pp 604-608, 2014.

[7] N.E. Sung, , S.W. Kang, H.J. Shin, H.K. Lee,I. J. Lee, "Cu doping effects on the electronic and optical properties of Cu-doped ZnO thin films fabricated by radio frequency sputtering.", Thin Solid Films, vol. 543, pp 285-288,2013.

[8] R. K. Singhal, A. Samariya, S. Kumarb, S. C. Sharma, Y. T. Xing, U. P. Deshpande, T. Shripathid, E. Saitovitchc, “A close correlation between induced ferromagnetism and oxygen deficiency in Fe doped In2O3” Applied Surface Science, vol. 257, pp 1053–1057., 2010.

[9] N. Bao, “Room temperature ferromagnetism study of TiO2 based magnetic semiconductors by pulsed laser deposition”, Dissertation. National University of Singapore, 2013.

[10] A. Manivannan, G. Glaspell, P. Dutta and M.S. Seehra “Nature of the reversible paramagnetism to ferromagnetism state in cobalt-doped titanium dioxide”, Journal of Applied Physics, vol. 97, pp 10D325,2005.

[11] T. Dietl, H. Ohno, F. Matsukura, J. Cibert, D. Ferrand, “Zener model description of ferromagnetism in zinc-blende magnetic semiconductors” Science , vol. 287 ,no. 5455, pp. 1019-1028, 2000.

[12] X.H. Xu, H.J. Blythe, M. Ziese, A.J. Behan, J.R. Neal, A. Mokhtari, R.M. Ibrahim, A.M. Fox, G.A. Gehring, “Carrier-induced ferromagnetism in n-type ZnMnAlO and ZnCoAlO thin films at room temperature” New Journal of Physics, vol. 8 , pp 135-144, 2006.

[13] A.J. Behan, A. Mokhtari, H.J. Blythe, D. Score, X.H. Xu, J.R. Neal, A.M. Fox, G.A. Gehring, “Two Magnetic Regimes in Doped ZnO Corresponding to a Dilute Magnetic Semiconductor and a Dilute Magnetic Insulator”, Physical Review Letters, doi:10.1103/PhysRevLett.100.047206, 2008.

[14] F. Zhang, D. Chao, H. Cui, W. Zhang , W. Zhang, “Electronic Structure and Magnetism of Mn-Doped ZnO Nanowires”, Nanomaterials, vol. 5, pp 885-894, 2015.

[15] M. Bouloudenine, N. Viart, S. Colis, J. Kortus, A. Dinia, “Antiferromagnetism in bulk Zn1?xCoxOZn1?xCoxO magnetic semiconductors prepared by the coprecipitation technique”, Applied Physics Letters, doi.org/10.1063/1.2001739,2005.

[16] F. Pan, C. Song, X.J. Liu, Y.C. Yang, F. Zeng, “Ferromagnetism and possible application in spintronics of transition-metal doped ZnO films” Material Science and Engineering, vol. R 62, pp 1–35,2008.

[17] S.B. Ogale, R.J. Choudhary, J.P. Buban, S.E. Lofand, S.R. Shinde, S.N. Kale, V.N. Kullkarni, J. Higgins, C. Lanci, J.R. Simpson, N.D. Browning, S.D. Sarma, H.D. Drew, R.L. Greene, T. Venkatesan, “High Temperature Ferromagnetism with a Giant Magnetic Moment in Transparent Co-doped SnO2?δ Physics Review Letters, doi:10.1103/PhysRevLett.91.077205, 2003.

[18] C.B. Fitzgerald, M. Venkatesan, A.P. Douvalis, S. Huber, J.M.D. Coey, T. Bakas, “SnO2 doped with Mn, Fe or Co: room temperature dilute magnetic semiconductors”, Journal of Applied. Physics, vol. 95, pp.7390-7392, 2004.

[19] J.M.D. Coey, A.P. Douvalis, C.B. Fitzgerald, M. Venkatesan, “Ferromagnetism in Fe-doped SnO2 thin films” Applied Physics Letters, doi:10.1063/1.1650041, 2004.

[20] J. Philip, A. Punnoose, B.I. Kim, K.M. Reddy, S. Layne, J.O. Holmes, B. Satpati, P.R. Leclair, T.S. Santos, J.S. Moodera, “Carrier-controlled ferromagnetism in transparent oxide semiconductors” Nature Materials, doi:10.1038/nmat1613.

[21] J. He, S.F. Xu, Y.K. Yoo, Q.Z. Xue, H.C. Lee, S.F. Cheng, X.D. Xiang, G.F. Dionneb, I. Takeuchi, “Room temperature ferromagnetic n-type semiconductor in ?In1?xFex)2O3?s” Applied Physics Letters, vol. 86, pp 052503, 2005.

[22] Y.K. Yoo, Q.Z. Xue, H.C. Lee, S.F. Cheng, X.D. Xiang, G.F. Dionneb, S.F. Xu, J. He, Y.S. Chu, S.D. Preite, S.E. Lofland, I. Takeuchi, “Bulk synthesis and high-temperature ferromagnetism of (In3-xFex)2O5-j with Cu co-doping”, Applied Physics Letters, vol. 86, no. 4, pp. 042506, 2005.

[23] X.H. Xu, F.X. Jiang, J. Zhang, X.C. Fan, H.S. Wu, G.A. Gehring, “Magnetic and transport properties of n -type Fe-doped In2 O3 ferromagnetic thin films” Applied Physics. Letters, vol. 94, 212510 , 2009.

[24] P.F. Xing, Y.X. Chen, S.S. Yan, G.L. Liu, L.M. Mei, Z. Zhang, “Tunable ferromagnetism by oxygen vacancies in Fe-doped In2O3 magnetic semiconductor”, Journal of Applied Physics, vol 106, no. 4, pp. 043909-043909-4,2009.

[25] R.K. Singhal, A. Samariyaa, S. Kumarb, S.C. Sharmaa, Y.T. Xingc, U.P. Deshpanded,T. Shripathid, E. Saitovitchc, "A close correlation between induced ferromagnetism and oxygen deficiency in Fe doped In2O3" Applied Surface Science, vol. 257,pp 1053-1057,2010.

[26] S.C. Li, P. Ren, B.C. Zhao, B. Xia, L. Wang , "Room temperature ferromagnetism of bulk polycrystalline (In0. 85-xSnxFe0.15) 2O3: Charge carrier mediated or oxygen vacancy mediated" Applied Physics Letters , vol. 95, no.10 pp 102101, 2009.

[27] B.C. Zhao, H.W. Ho, B. Xia, L.H. Tan, A.C. Huan, L. Wang, "Effect of oxygen vacancy on ferromagnetism and electric transport of bulk polycrystalline (In0. 8Mo0.05Fe0.15)2O3." Applied Physics Letters, vol. 93, no. 22, pp 2506, 2008.

[28] F.X. Jiang, X.H. Xu, J. Zhang, X.C. Fan, H.S. Wu, G.A. Gehring, "Role of carrier and spin in tuning ferromagnetism in Mn and Cr-doped In2O3 thin films." Applied Physics Letters , vol. 96, pp 052503 2010.

[29] N.H. Hong, J. Sakai, N.T. Huong, V. Brizé, "Room temperature ferromagnetism in laser ablated Ni-doped In2O3 thin films." Applied Physics Letters , vol. 87,pp 102505, 2005.

[30] G. Peleckis, X.L. Wang, S.X. Dou, "High temperature ferromagnetism in Ni-doped In2O3 and indium-tin oxide." 89 , pp 022501,2006.

[31] D. Bérardan, E. Guilmeau, “Magnetic properties of bulk Fe-doped indium oxide”, Journal of Physics: Condensed Matter, vol. 19, no. 23, pp 236224, 2007.

[32] R.K. Singhal, A. Samariya, Y.T .Xing, S. Kumar, T. Shripathi, U.P. Deshpande , E. Saitovitch , “Electronic and magnetic properties of Co-doped ZnO diluted magnetic semiconductor”. Journal of Alloys Compound, vol. 496, pp 324-330, 2010.

[33] J. Rodriguez-Carvajal, in: FULLPROF version 3.0.0. Laboratorie Leon Brillouin,CEA-CNRS, 2003.

[34] R. D. Shannon, "Revised effective ionic radii and systematic studies of interatomic distances in halides and chalcogenides." Acta Crystallographica Section A: Crystal Physics, Diffraction, Theoretical and General Crystallography , vol. 32, no. 5, pp 751-767,1976.

[35] J.M.D. Coey, M. Venkateshan, C.B. Fitzgerald,"Donor impurity band exchange in dilute ferromagnetic oxides." Nature Materials , vol. 4, no. 2, pp 173-179, 2005.

[36] P. D. C. King, R. L. Lichti, Y. G. Celebi, J. M. Gil, R. C. Vil?o, H. V. Alberto, J. Piroto Duarte, D. J. Payne, R. G. Egdell, I. McKenzie, C. F. McConville, S. F. J. Cox, and T. D. Veal, “Shallow donor state of hydrogen in In 2 O 3 and SnO 2: implications for conductivity in transparent conducting oxides." Physical Review B 80, no. 8, pp 081201(1)- 081201(4),2009.